BC846B,215 NXP Semiconductors, BC846B,215 Datasheet - Page 5
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BC846B,215
Manufacturer Part Number
BC846B,215
Description
TRANS NPN GP 100MA 65V SOT23
Manufacturer
NXP Semiconductors
Specifications of BC846B,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
65V
Collector-base Voltage
80V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
100MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1632-2
933589560215
BC846B T/R
933589560215
BC846B T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC846B,215
Manufacturer:
NXP Semiconductors
Quantity:
16 800
NXP Semiconductors
7. Characteristics
BC846_BC546_SER_7
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol Parameter
I
I
h
V
V
V
f
C
C
NF
CBO
EBO
T
amb
FE
CEsat
BEsat
BE
c
e
Pulse test: t
V
V
= 25
BEsat
BE
decreases by approximately 2 mV/K with increasing temperature.
°
decreases by approximately 1.7 mV/K with increasing temperature.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage I
transition frequency
collector capacitance V
emitter capacitance
noise figure
C unless otherwise specified.
Characteristics
h
h
h
h
FE
FE
FE
FE
p
≤ 300 μs; δ ≤ 0.02.
group A
group B
group A
group B
Rev. 07 — 17 November 2009
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
V
f = 100 MHz
f = 1 MHz
V
f = 1 MHz
I
R
B = 200 Hz
C
C
C
C
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
EB
S
= 150 °C
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= 200 μA; V
= 2 kΩ; f = 1 kHz;
= 5 V; I
= 0.5 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
65 V, 100 mA NPN general-purpose transistors
E
C
C
C
C
C
C
CE
B
B
E
E
E
= 0 A
C
= 10 μA
= 10 μA
= 2 mA
= 2 mA
= 2 mA
= 10 mA;
CE
B
B
CE
= 0 A
= 0 A;
= 0.5 mA
= 0.5 mA
= i
= i
= 5 V
= 5 mA
= 5 mA
= 5 V
e
BC846/BC546 series
= 5 V;
c
= 0 A;
= 0 A;
[1]
[2]
[2]
[3]
[3]
Min
-
-
-
-
-
110
110
200
-
-
-
-
580
-
100
-
-
-
Typ
-
-
-
180
290
-
180
290
90
200
760
900
660
-
-
2
11
2
© NXP B.V. 2009. All rights reserved.
Max
15
5
100
-
-
450
220
450
200
400
-
-
700
770
-
3
-
10
Unit
nA
μA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
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