BC849CW,115 NXP Semiconductors, BC849CW,115 Datasheet

TRANSISTOR NPN 30V 100MA SOT323

BC849CW,115

Manufacturer Part Number
BC849CW,115
Description
TRANSISTOR NPN 30V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC849CW,115

Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
200mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Transistor Type
NPN
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Collector/base Gain Hfe Min
420
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934022070115::BC849CW T/R::BC849CW T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC849CW,115
Manufacturer:
NXP Semiconductors
Quantity:
12 800
Product data sheet
Supersedes data of 1997 Jun 20
dbook, halfpage
DATA SHEET
BC849W; BC850W
NPN general purpose transistors
DISCRETE SEMICONDUCTORS
M3D102
1999 Apr 12

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BC849CW,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 DISCRETE SEMICONDUCTORS M3D102 1999 Apr 12 ...

Page 2

... NXP Semiconductors NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. ...

Page 3

... NXP Semiconductors NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE BC849BW ...

Page 4

... NXP Semiconductors NPN general purpose transistors 300 handbook, full pagewidth h FE 200 100 0 −2 − BC849BW; BC850BW. 600 handbook, full pagewidth h FE 400 200 0 −2 − BC849CW; BC850CW. 1999 Apr Fig.2 DC current gain; typical values Fig.3 DC current gain; typical values. 4 Product data sheet BC849W ...

Page 5

... NXP Semiconductors NPN general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 1999 Apr scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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