BC849CW,115 NXP Semiconductors, BC849CW,115 Datasheet - Page 5

• Manufacturer Part Number: BC849CW,115
• Description: TRANSISTOR NPN 30V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC849CW,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Transistor Type: NPN
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Collector/base Gain Hfe Min: 420
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022070115::BC849CW T/R::BC849CW T/R

NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 12
Plastic surface mounted package; 3 leads
NPN general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
1.3
e
w
B
M
0.65
B
e 1
SC-70
scale
EIAJ
1
5
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
BC849W; BC850W
A
Q
c
Product data sheet
X
v
ISSUE DATE
97-02-28
M
A
SOT323