BC849C /T3 NXP Semiconductors, BC849C /T3 Datasheet

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BC849C /T3

Manufacturer Part Number
BC849C /T3
Description
Transistors Bipolar - BJT TRANS LOW NOISE TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC849C /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC849C,235
Product data sheet
Supersedes data of 1999 Apr 08
DATA SHEET
BC849; BC850
NPN general purpose transistors
DISCRETE SEMICONDUCTORS
2004 Jan 16

Related parts for BC849C /T3

BC849C /T3 Summary of contents

Page 1

... DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 08 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...

Page 2

... NXP Semiconductors NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. MARKING TYPE MARKING (1) NUMBER CODE ...

Page 3

... NXP Semiconductors NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BC849 BC850 V collector-emitter voltage CEO BC849 BC850 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors NPN general purpose transistors CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B BC849C; BC850C V collector-emitter saturation CEsat voltage V base-emitter saturation voltage ...

Page 5

... NXP Semiconductors NPN general purpose transistors 300 handbook, full pagewidth h FE 200 100 0 −2 − BC849B; BC850B. 600 handbook, full pagewidth h FE 400 200 0 −2 − BC849C; BC850C. 2004 Jan Fig.2 DC current gain; typical values ...

Page 6

... NXP Semiconductors NPN general purpose transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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