BC859BW,115 NXP Semiconductors, BC859BW,115 Datasheet - Page 3

• Manufacturer Part Number: BC859BW,115
• Description: TRANSISTOR PNP 30V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC859BW,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 220
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 30 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934024310115; BC859BW T/R; BC859BW T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 12
R
I
I
h
V
V
C
C
f
F
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BE
PNP general purpose transistors
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
p
BC859W; BC860W
BC859BW; BC860BW
BC859CW; BC860CW
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
see Figs 2 and 3
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
I
f = 1 kHz; B = 200 Hz
C
E
E
C
C
C
C
C
C
E
C
C
C
= −10 mA; V
= 0; V
= 0; V
= 0; V
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −2 mA; V
= −10 mA; V
= i
= i
= −200 μA; V
= −200 μA; V
e
c
= 0; V
= 0; V
CB
CB
EB
= −30 V
= −30 V; T
= −5 V
CONDITIONS
CB
EB
CE
CE
3
B
CE
CE
B
= −10 V; f = 1 MHz
= −500 mV; f = 1 MHz
CE
CE
= −0.5 mA
= −5 V;
= −5 V
note 1
= −5 mA; note 1
= −5 V; f = 100 MHz
= −5 V
= −5 V; R
= −5 V; R
CONDITIONS
j
= 150 °C
S
S
= 2 kΩ;
= 2 kΩ;
−
−
−
220
220
420
−
−
600
−
−
−
100
−
−
BC859W; BC860W
MIN.
VALUE
625
−
−
−
−
−
−
−
−
−
−
−
10
−
−
−
TYP.
Product data sheet
−15
−4
−100
800
475
800
−300
−650
750
820
5
−
−
4
4
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
dB
UNIT