BC859BW,115 NXP Semiconductors, BC859BW,115 Datasheet - Page 4

• Manufacturer Part Number: BC859BW,115
• Description: TRANSISTOR PNP 30V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC859BW,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 220
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 30 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934024310115; BC859BW T/R; BC859BW T/R

NXP Semiconductors
1999 Apr 12
handbook, full pagewidth
handbook, full pagewidth
PNP general purpose transistors
BC859BW; BC860BW.
BC859CW; BC860CW.
h FE
h FE
600
500
400
300
200
100
400
300
200
100
−10
−10
0
0
−2
−2
−10
−10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
−1
−1
4
−10
−10
V CE = −5 V
V CE = −5 V
BC859W; BC860W
−10
−10
2
2
I C (mA)
I C (mA)
Product data sheet
MBH728
MBH727
−10
−10
3
3