BCX70K,215 NXP Semiconductors, BCX70K,215 Datasheet - Page 3

• Manufacturer Part Number: BCX70K,215
• Description: TRANSISTOR NPN 45V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCX70K,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: NPN
• Frequency - Transition: 250MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 380 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933476670215::BCX70K T/R::BCX70K T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
PARAMETER
PARAMETER
3
open emitter
open base
open collector
T
note 1
amb
CONDITIONS
CONDITIONS
≤ 25 °C
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
BCX70 series
45
45
5
100
200
200
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT