BCW61C,215 NXP Semiconductors, BCW61C,215 Datasheet - Page 3

• Manufacturer Part Number: BCW61C,215
• Description: TRANSISTOR PNP 32V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCW61C,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933324140215; BCW61C T/R; BCW61C T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 12
R
I
I
h
V
V
V
C
C
f
F
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BE
PNP general purpose transistors
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BCW61B
BCW61C
BCW61D
BCW61B
BCW61C
BCW61D
BCW61B
BCW61C
BCW61D
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz; note 1
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
= 0; V
= 0; V
= i
= 0; V
= −10 μA; V
= −2 mA; V
= −50 mA; V
= −10 mA; I
= −50 mA; I
= −10 mA; I
= −50 mA; I
= −2 mA; V
= −10 μA; V
= −50 mA; V
= i
= −10 mA; V
= −200 μA; V
e
c
= 0; V
= 0; V
CB
CB
EB
note 1
3
= −32 V
= −32 V; T
= −4 V
CONDITIONS
CB
EB
CE
CE
B
B
B
B
CE
CE
CE
CE
CE
CONDITIONS
= −0.5 V; f = 1 MHz
= −10 V; f = 1 MHz
CE
= −0.25 mA
= −1.25 mA
= −0.25 mA
= −1.25 mA
= −5 V
= −5 V
= −5 V
= −5 V
= −1 V
= −1 V
= −5 V;
= −5 V; R
amb
= 150 °C
S
= 2 kΩ;
−
−
−
30
40
100
180
250
380
80
100
110
−60
−120
−600
−0.68 −
−600
−
−
−
−
100
−
MIN.
VALUE
500
BCW61 series
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−650
−550
−720
4.5
11
−
2
TYP.
Product data sheet
−20
−20
−20
−
−
−
310
460
630
−
−
−
−250
−550
−850
−1.05 V
−750
−
−
−
−
−
6
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
UNIT