PMBTA64,215 NXP Semiconductors, PMBTA64,215 Datasheet - Page 2

• Manufacturer Part Number: PMBTA64,215
• Description: TRANS PNP 30V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBTA64,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Transistor Type: PNP - Darlington
• Frequency - Transition: 125MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 500 mA
• Dc Collector/base Gain Hfe Min: 10000
• Maximum Operating Frequency: 125 MHz
• Minimum Operating Temperature: - 65 C
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 933816480215::PMBTA64 T/R::PMBTA64 T/R

NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10 000).
APPLICATIONS
• High input impedance preamplifiers.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complement: PMBTA14.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 22
PMBTA64
PMBTA64
V
V
V
I
I
I
P
T
T
T
C
CM
B
NUMBER
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
PNP Darlington transistor
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
plastic surface mounted package; 3 leads
MARKING CODE
*2V
(1)
open emitter
V
open collector
T
amb
BE
= 0
≤ 25 °C; note 1
DESCRIPTION
2
PACKAGE
CONDITIONS
PINNING
handbook, halfpage
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
1
base
emitter
collector
3
−
−
−
−
−
−
−
−65
−
−65
2
MIN.
DESCRIPTION
−30
−30
−10
−500
−800
−200
250
+150
150
+150
Product data sheet
MAX.
PMBTA64
1
TR1
VERSION
SOT23
MAM299
V
V
V
mA
mA
mA
mW
°C
°C
°C
TR2
3
2
UNIT