PMST6428,115 NXP Semiconductors, PMST6428,115 Datasheet - Page 3

• Manufacturer Part Number: PMST6428,115
• Description: TRANS NPN 50V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PMST6428,115

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 200mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934030870115; PMST6428 T/R; PMST6428 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 22
R
I
I
h
V
V
C
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BE
NPN general purpose transistors
th j-a
c
e
≤ 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
p
PMST6428
PMST6429
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
V
V
I
I
I
I
I
I
E
E
C
C
C
C
E
C
C
CE
CE
I
I
I
I
I
I
I
I
= 0; V
= 0; V
= i
= 0; V
= 10 mA; I
= 100 mA; I
= 1 mA; V
= i
= 1 mA; V
C
C
C
C
C
C
C
C
= 5 V
= 5 V
= 0.01 mA
= 0.1 mA
= 1 mA
= 10 mA
= 0.01 mA
= 0.1 mA
= 1 mA
= 10 mA
e
c
= 0; V
= 0; V
CB
CB
EB
3
CONDITIONS
= 30 V
= 30 V; T
= 5 V
CB
EB
CE
CE
B
note 1
B
= 0.5 mA; note 1
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 5 V
= 5 V; f = 100 MHz
= 5 mA; note 1
CONDITIONS
j
= 150 °C
PMST6428; PMST6429
−
−
−
250
250
250
250
500
500
500
500
−
−
560
−
−
100
MIN.
VALUE
625
10
10
10
−
650
−
−
−
1 250
−
−
200
600
660
3
12
700
Product data sheet
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
pF
pF
MHz
UNIT