BSV52,215 NXP Semiconductors, BSV52,215 Datasheet - Page 4

• Manufacturer Part Number: BSV52,215
• Description: TRANSISTOR NPN 12V 100MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BSV52,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 500MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 500 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933099000215; BSV52 T/R; BSV52 T/R

NXP Semiconductors
2004 Jan 14
handbook, full pagewidth
NPN switching transistor
V
R1 = 56 Ω; R2 = 1 kΩ; R
V
Oscilloscope: input impedance Z
i
BB
= 0.5 V to 4.2 V; T = 500 µs; t
= 0.2 V; V
CC
= 2.7 V.
B
= 1 kΩ; R
p
i
= 10 µs; t
= 50 Ω.
C
= 270 Ω.
oscilloscope
r
= t
s
V i
≤ 3 ns.
Fig.2 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
oscilloscope
Product data sheet
BSV52