BCX19T/R NXP Semiconductors, BCX19T/R Datasheet - Page 3

• Manufacturer Part Number: BCX19T/R
• Description: Trans GP BJT NPN 45V 0.5A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCX19T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 100@100mA@1V|70@300mA@1V|40@500mA@1V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Emitter Saturation Voltage: 0.62@50mA@500mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Notes
1. Pulse test: t
2. V
2004 Jan 16
R
I
I
h
V
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BE
NPN general purpose transistor
th(j-a)
c
BE
decreases by approximately −2 mV/°C with increasing temperature.
thermal resistance from junction to ambient note 1
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
E
E
C
C
C
E
C
CE
I
I
I
= 0; V
= 0; V
= 0; V
= 500 mA; I
= 500 mA; V
= I
= 10 mA; V
C
C
C
= 1 V; note 1
= 100 mA
= 300 mA
= 500 mA
e
= 0; V
CB
CB
EB
= 20 V
= 20 V; T
= 5 V
CB
CONDITIONS
CE
3
B
CE
= 10 V; f = 1 MHz
= 50 mA; note 2
= 5 V; f = 100 MHz
= 1 V; notes 1 and 2
j
CONDITIONS
= 150 °C
−
−
−
100
70
40
−
−
−
100
MIN.
VALUE
500
−
−
−
−
−
−
−
−
5
−
TYP.
Product data sheet
100
5
100
600
−
−
620
1.2
−
−
MAX.
BCX19
UNIT
K/W
nA
μA
nA
mV
V
pF
MHz
UNIT