BFS17T/R NXP Semiconductors, BFS17T/R Datasheet - Page 4

• Manufacturer Part Number: BFS17T/R
• Description: Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFS17T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 25@2mA@1V|25@25mA@1V
• Maximum Operating Frequency: 1600(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 25 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2.5 V

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 1 GHz wideband transistor
V
V
(GHz)
CE
CE
h FE
f T
Fig.4
100
= 1 V; T
= 5 V; f = 500 MHz; T
50
0
2
1
0
Fig.2
0
0
j
= 25 C.
Transition frequency as a function of
collector current.
DC current gain as a function of
collector current.
10
10
j
= 25 C.
20
20
I C (mA)
I C (mA)
MEA393
MEA395
30
30
4
handbook, halfpage
handbook, halfpage
I
V
E
CE
C c
(pF)
= i
(dB)
Fig.3
Fig.5
2.0
1.6
1.2
0.8
0.4
F
= 5 V; R
e
10
0
5
0
= 0; f = 1 MHz; T
0
0
S
Collector capacitance as a function of
collector-base voltage.
Minimum noise figure as a function of
collector current.
= 50 ; f = 500 MHz; T
4
j
10
= 25 C.
8
j
12
= 25 C.
20
Product specification
V CB (V)
16
I C (mA)
MEA396
MEA397
BFS17
20
30