BFS17T/R NXP Semiconductors, BFS17T/R Datasheet - Page 4
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BFS17T/R
Manufacturer Part Number
BFS17T/R
Description
Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet
1.BFS17215.pdf
(8 pages)
Specifications of BFS17T/R
Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
25@2mA@1V|25@25mA@1V
Maximum Operating Frequency
1600(Typ) MHz
Maximum Dc Collector Current
0.025 A
Maximum Collector Base Voltage
25 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
2.5 V
NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 1 GHz wideband transistor
V
V
(GHz)
CE
CE
h FE
f T
Fig.4
100
= 1 V; T
= 5 V; f = 500 MHz; T
50
0
2
1
0
Fig.2
0
0
j
= 25 C.
Transition frequency as a function of
collector current.
DC current gain as a function of
collector current.
10
10
j
= 25 C.
20
20
I C (mA)
I C (mA)
MEA393
MEA395
30
30
4
handbook, halfpage
handbook, halfpage
I
V
E
CE
C c
(pF)
= i
(dB)
Fig.3
Fig.5
2.0
1.6
1.2
0.8
0.4
F
= 5 V; R
e
10
0
5
0
= 0; f = 1 MHz; T
0
0
S
Collector capacitance as a function of
collector-base voltage.
Minimum noise figure as a function of
collector current.
= 50 ; f = 500 MHz; T
4
j
10
= 25 C.
8
j
12
= 25 C.
20
Product specification
V CB (V)
16
I C (mA)
MEA396
MEA397
BFS17
20
30