BCP68-25,115 NXP Semiconductors, BCP68-25,115 Datasheet - Page 7

• Manufacturer Part Number: BCP68-25,115
• Description: TRANSISTOR NPN 20V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP68-25,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 500mA, 1V
• Power - Max: 1.4W
• Frequency - Transition: 170MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 170 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933969370115; BCP68-25 T/R; BCP68-25 T/R

NXP Semiconductors
2003 Nov 25
handbook, halfpage
NPN medium power transistor;
20 V, 1 A
Fig.4
(1) I
(2) I
(3) I
(4) I
(5) I
T
(A)
amb
I C
0.4
2.4
2.0
1.6
1.2
0.8
B
B
B
B
B
= 25 °C.
0
= 10 mA.
= 9 mA.
= 8 mA.
= 7 mA.
= 6 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
1
(6) I
(7) I
(8) I
(9) I
(10) I
2
B
B
B
B
B
= 5 mA.
= 4 mA.
= 3 mA.
= 2 mA.
= 1 mA.
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
3
4
V CE (V)
MDB848
5
7
handbook, halfpage
(mV)
V BE
V
Fig.5
BE
1000
800
600
400
200
/V
CE
0
10
= 1 V.
−1
Base-emitter voltage as a function of
collector current; typical values.
1
10
10
2
Product data sheet
10
3
I C (mA)
MDB849
BCP68
10
4