BCP68,115 NXP Semiconductors, BCP68,115 Datasheet
BCP68,115
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BCP68,115 Summary of contents
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DATA SHEET ndbook, halfpage BCP68 NPN medium power transistor Product data sheet Supersedes data of 1999 Apr 08 DISCRETE SEMICONDUCTORS M3D087 2003 Nov 25 ...
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... NXP Semiconductors NPN medium power transistor FEATURES • High current • Two current gain selections • 1.4 W total power dissipation. APPLICATIONS • Linear voltage regulators • Low side switches • Supply line switch for negative voltages • MOSFET drivers • Audio pre-amplifiers. ...
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... NXP Semiconductors NPN medium power transistor ORDERING INFORMATION TYPE NUMBER NAME − BCP68 BCP68-25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current ...
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... NXP Semiconductors NPN medium power transistor 1.6 handbook, halfpage (1) P tot (W) 1.2 (2) 0.8 (3) 0.4 0 − ( collector mounting pad collector mounting pad. (3) Standard PCB footprint. Fig.1 Power derating curve. THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to solder point ...
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... NXP Semiconductors NPN medium power transistor handbook, full pagewidth 1.20 (4x) 7.40 Dimensions in mm. Fig.2 Standard PCB footprint for mounting SOT223 (reflow soldering). 2003 Nov 25 7.00 3.85 3.60 3.50 0. 1.20 (3x) 1.30 (3x) 5.90 6.15 5 Product data sheet solder lands solder resist occupied area solder paste 3 ...
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... NXP Semiconductors NPN medium power transistor handbook, halfpage 1.3 mm 0.5 mm 3.96 mm Dimensions in mm. 2 Fig collector mounting pad. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat ...
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... NXP Semiconductors NPN medium power transistor 2.4 handbook, halfpage I C (A) (1) 2.0 (2) (3) 1.6 (4) (5) (6) 1.2 (7) (8) 0.8 (9) 0.4 (10 °C. T amb ( mA mA mA mA mA. (10 mA Fig.4 Collector current as a function of collector-emitter voltage; typical values. 2003 Nov 25 MDB848 handbook, halfpage V BE ...
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... NXP Semiconductors NPN medium power transistor handbook, halfpage − Fig.6 DC current gain as a function of collector current; typical values. 2003 Nov 25 MDB850 handbook, halfpage (mA CEsat (mV − 10 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. Product data sheet BCP68 MDB851 (mA) ...
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... NXP Semiconductors NPN medium power transistor (1) (2) (3) R th(j-a) (4) (K/W) (5) 10 (6) (7) (8) (9) 1 (10) −1 10 −5 − (1) δ = 1.0. (3) δ = 0.5. (2) δ = 0.75. (4) δ = 0.33. Fig.8 Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm mounting pad. 2003 Nov 25 − ...
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... NXP Semiconductors NPN medium power transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 2003 Nov scale 0.32 6 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...