BCP68,115 NXP Semiconductors, BCP68,115 Datasheet - Page 8
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BCP68,115
Manufacturer Part Number
BCP68,115
Description
TRANSISTOR NPN 20V 1A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BCP68-25115.pdf
(12 pages)
Specifications of BCP68,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1.4W
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
20V
Transistor Type
NPN
Frequency - Transition
170MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
85 @ 500mA, 1V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Power Dissipation
1400 mW
Maximum Operating Frequency
170 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
20V
Collector-base Voltage
32V
Emitter-base Voltage
5V
Collector Current (dc) (max)
2A
Dc Current Gain (min)
50
Frequency (max)
170MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933968660115::BCP68 T/R::BCP68 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP68,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2003 Nov 25
handbook, halfpage
NPN medium power transistor;
20 V, 1 A
h
Fig.6
FE
h FE
/V
10
10
CE
3
2
10
= 1 V.
−1
DC current gain as a function of collector
current; typical values.
1
10
10
2
10
3
I C (mA)
MDB850
10
4
8
handbook, halfpage
V CEsat
I
Fig.7
C
(mV)
/I
B
10
10
= 10.
10
1
3
2
10
−1
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
10
10
2
Product data sheet
10
3
I C (mA)
MDB851
BCP68
10
4