BCP68,115 NXP Semiconductors, BCP68,115 Datasheet - Page 8

• Manufacturer Part Number: BCP68,115
• Description: TRANSISTOR NPN 20V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP68,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.4W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Transistor Type: NPN
• Frequency - Transition: 170MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 85 @ 500mA, 1V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 170 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 20V
• Collector-base Voltage: 32V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 2A
• Dc Current Gain (min): 50
• Frequency (max): 170MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933968660115::BCP68 T/R::BCP68 T/R

NXP Semiconductors
2003 Nov 25
handbook, halfpage
NPN medium power transistor;
20 V, 1 A
h
Fig.6
FE
h FE
/V
10
10
CE
3
2
10
= 1 V.
−1
DC current gain as a function of collector
current; typical values.
1
10
10
2
10
3
I C (mA)
MDB850
10
4
8
handbook, halfpage
V CEsat
I
Fig.7
C
(mV)
/I
B
10
10
= 10.
10
1
3
2
10
−1
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
10
10
2
Product data sheet
10
3
I C (mA)
MDB851
BCP68
10
4