BCP68,115 NXP Semiconductors, BCP68,115 Datasheet - Page 6

• Manufacturer Part Number: BCP68,115
• Description: TRANSISTOR NPN 20V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP68,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.4W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Transistor Type: NPN
• Frequency - Transition: 170MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 85 @ 500mA, 1V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 170 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 20V
• Collector-base Voltage: 32V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 2A
• Dc Current Gain (min): 50
• Frequency (max): 170MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933968660115::BCP68 T/R::BCP68 T/R

NXP Semiconductors
CHARACTERISTICS
T
2003 Nov 25
handbook, halfpage
I
I
h
V
V
C
f
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BE
NPN medium power transistor;
20 V, 1 A
c
Dimensions in mm.
= 25 °C unless otherwise specified.
40 mm
Fig.3 6 cm
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter voltage
collector capacitance
transition frequency
3.96 mm
0.5 mm
2
PARAMETER
collector mounting pad.
32 mm
30 mm
1.3 mm
2.6 mm
MDB845
1.6 mm
20 mm
5 mm
V
V
V
BCP68
BCP68-25
V
V
V
V
C
CB
CB
EB
CE
CE
CB
CE
V
V
V
V
= 1 A; I
CE
CE
CE
CE
= 5 V; I
= 25 V; I
= 25 V; I
= 10 V; I
= 1 V; I
= 10 V; I
= 5 V; I
= 10 V; I
= 1 V; I
= 1 V; I
= 1 V; I
B
6
= 100 mA
C
C
C
CONDITIONS
E
E
C
E
= 0
= 1 A
= 50 mA; f = 100 MHz
C
C
C
= 0
= 0; T
= i
= 5 mA
C
= 500 mA
= 1 A
= 500 mA
= 5 mA
e
= 0; f = 1 MHz
j
= 150 °C
−
−
−
50
85
60
160
−
−
−
−
40
MIN.
−
−
−
−
−
−
−
−
−
−
22
170
TYP.
Product data sheet
100
10
100
−
375
−
375
500
700
1
−
−
MAX. UNIT
BCP68
nA
μA
nA
mV
mV
V
pF
MHz