BCP68 Fairchild Semiconductor, BCP68 Datasheet
BCP68
Manufacturer Part Number
BCP68
Description
TRANSISTOR NPN 20V 1A SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCP68.pdf
(3 pages)
Specifications of BCP68
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
85 @ 500mA, 1V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
1.5 W
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
85
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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©2001 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers.
• Sourced from process 37.
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
Off Characteristics
V
V
V
I
I
On Characteristics (1)
h
V
V
C
CBO
EBO
FE
J
CEO
CBO
EBO
D
(BR)CES
(BR)CEO
(BR)EBO
CE(sat)
BE(on)
, T
Symbol
Symbol
STG
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
Operating and Storage Junction Temperature Range
- Derate above 25 C
Parameter
T
C
=25 C unless otherwise noted
T
Parameter
C
=25 C unless otherwise noted
@ T
BCP68
A
=25 C
I
I
I
V
V
V
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
CB
EB
= 10 A, I
= 100 A, I
= 1mA, I
= 5mA, V
= 500mA, V
= 1A, V
= 1A, I
= 1A, V
= 25V, I
= 5V, I
= 25V, I
Test Conditions
B
CE
CE
B
C
= 100mA
C
CE
E
E
= 0
= 0
E
= 1V
= 1V
= 0
= 0, T
= 0, T
CE
= 0
= 10V
= 1V
A
A
= 125 C
= 25 C
1. Base 2.4. Collector 3. Emitter
- 55 ~ +150
4
Min.
Value
25
20
50
85
60
5
1.5
20
30
12
5
1
Typ.
1
SOT-223
2
Max.
375
0.5
10
10
1
1
Rev. A, August 2001
mW/ C
3
Units
Watts
V
V
V
A
C
Units
mA
V
V
V
V
V
A
A
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BCP68 Summary of contents
Page 1
... Emitter-Base Breakdown Voltage (BR)EBO I Collector-Base Cutoff Current CBO I Emitter-Base Cutoff Current EBO On Characteristics ( Current Gain FE V Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter On Voltage BE(on) ©2001 Fairchild Semiconductor Corporation BCP68 T =25 C unless otherwise noted C Parameter @ T = =25 C unless otherwise noted C Test Conditions I = 100 1mA, I ...
Page 2
... Package Demensions (0.95) ©2001 Fairchild Semiconductor Corporation SOT-223 3.00 0.10 MAX1.80 2.30 TYP 0.70 0.10 (0.95) 4.60 0.25 0.25 6.50 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters Rev. A, August 2001 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...