BSR31,115 NXP Semiconductors, BSR31,115 Datasheet - Page 3
![TRANS PNP 80V 1000MA SOT89](/photos/5/27/52758/568-mpt3_sot-89-3_sc-62_to-243-3_sot89_sml.jpg)
BSR31,115
Manufacturer Part Number
BSR31,115
Description
TRANS PNP 80V 1000MA SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BSR30115.pdf
(7 pages)
Specifications of BSR31,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1.35W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1350 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933418120115
BSR31 T/R
BSR31 T/R
BSR31 T/R
BSR31 T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2004 Dec 13
V
V
V
I
I
I
P
T
T
T
R
R
SYMBOL
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP medium power transistors
th(j-a)
th(j-s)
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BSR30; BSR31
BSR33
BSR30; BSR31
BSR33
PARAMETER
PARAMETER
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
3
CONDITIONS
note 1
CONDITIONS
BSR30; BSR31; BSR33
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
93
13
−70
−90
−60
−80
−5
−1
−2
−200
1.35
+150
150
+150
MAX.
Product data sheet
UNIT
V
V
V
V
V
A
A
mA
W
°C
°C
°C
K/W
K/W
2
2
UNIT
.
.