BSR31,115 NXP Semiconductors, BSR31,115 Datasheet - Page 3

• Manufacturer Part Number: BSR31,115
• Description: TRANS PNP 80V 1000MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSR31,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 1.35W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1350 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933418120115; BSR31 T/R; BSR31 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2004 Dec 13
V
V
V
I
I
I
P
T
T
T
R
R
SYMBOL
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP medium power transistors
th(j-a)
th(j-s)
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BSR30; BSR31
BSR33
BSR30; BSR31
BSR33
PARAMETER
PARAMETER
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
3
CONDITIONS
note 1
CONDITIONS
BSR30; BSR31; BSR33
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
93
13
−70
−90
−60
−80
−5
−1
−2
−200
1.35
+150
150
+150
MAX.
Product data sheet
UNIT
V
V
V
V
V
A
A
mA
W
°C
°C
°C
K/W
K/W
2
2
UNIT
.
.