BST39,115 NXP Semiconductors, BST39,115 Datasheet - Page 6

• Manufacturer Part Number: BST39,115
• Description: TRANSISTOR NPN 350V 100MA SOT-89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BST39,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 70 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933516290115; BST39 T/R; BST39 T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R75/05/pp6
Date of release: 2004 Dec 14
Document order number: 9397 750 13876