2SA1834TLS Rohm Semiconductor, 2SA1834TLS Datasheet

TRANS PNP 20V 10A SOT-428 TR

2SA1834TLS

Manufacturer Part Number
2SA1834TLS
Description
TRANS PNP 20V 10A SOT-428 TR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SA1834TLS

Transistor Type
PNP
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
250mV @ 50mA, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 500mA, 2V
Power - Max
1W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Transistors
Low V
(−20V, −10A)
2SA1834
1) Low saturation voltage,
2) High current capacity, typically I
3) Complements the 2SC5001.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Features
Packaging specifications and h
Absolute maximum ratings (Ta=25 ° C)
Electrical characteristics (Ta=25 ° C)
typically V
operation and –15A for 10ms pulse.
Single pulse Pw=10ms
Measured using pulse current.
Basic ordering unit (pieces)
Package
Parameter
Code
CE(sat)
Type
Parameter
h
FE
CE(sat)
= −0.16V at I
C
/ I
2SA1834
Transistor (Strobe flash)
C
B
CPT3
= –10A for DC
2500
Symbol
= −4A / −50mA.
RS
FE
TL
V
V
V
Tstg
I
P
CBO
CEO
EBO
I
I
Tj
CP
Symbol
V
C
B
BV
BV
BV
V
C
Cob
I
I
CE(sat)
BE(sat)
h
h
CBO
EBO
f
FE1
FE2
CBO
CEO
EBO
T
−55 to +150
Min.
−30
−20
180
Limits
−6
82
−30
−20
−10
−15
150
−6
−2
10
1
−0.16
Typ.
−0.9
150
220
W(Tc=25 °C )
−0.25
External dimentions (Unit : mm)
Max.
−1.2
(1)Base
(2)Collector
(3)Emitter
560
CPT3
−1
−1
Unit
°C
°C
W
V
V
V
A
A
A
MHz
Unit
µA
µA
pF
V
V
V
V
V
I
I
I
V
V
I
I
V
V
V
V
C
C
E
C
C
0.75
=−50µA
CB
EB
CE
CE
CE
CB
=−50µA
=−1mA
/I
/I
0.9
B
B
=−20V
=−5V
=−2V , I
=−2V , I
=−5V , I
=−10V , I
=−4A/−0.05A
=−4A/−0.05A
(1)
2.3
6.5
5.1
(2)
C
C
E
=1.5A , f=50MHz
=−0.5A
=−4A
E
=0A , f=1MHz
(3)
0.65
2.3
Conditions
Rev.A
2.3
0.5
2SA1834
0.5
1.0
1/3

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2SA1834TLS Summary of contents

Page 1

Transistors Low V Transistor (Strobe flash) CE(sat) (−20V, −10A) 2SA1834 Features 1) Low saturation voltage, = −0.16V −4A / −50mA. typically CE(sat High current capacity, typically I = –10A for DC ...

Page 2

Transistors Electrical characteristics (Ta=25 ° C) −10 = − − 150 °C −2 25 °C −1 −55 °C −500m −200m −100m −50m −20m −10m −5m −2m −1m −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 0 BASE ...

Page 3

Transistors 100 50 Pw=10ms 100ms 500m 200m 100m Ta=25 °C 50m ∗Single nonrepetitive 20m pulse 10m 0.01 0.02 0.05 0.1 0.2 0 100 COLLECTOR TO EMITTER VOLTAGE : ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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