2SA1834TLS Rohm Semiconductor, 2SA1834TLS Datasheet - Page 2

• Manufacturer Part Number: 2SA1834TLS
• Description: TRANS PNP 20V 10A SOT-428 TR
• Manufacturer: Rohm Semiconductor

Specifications of 2SA1834TLS

• Transistor Type: PNP
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Transistors
Fig.4 Collector-emitter saturation voltage
Electrical characteristics (Ta=25 ° C)
−1000
−500m
−200m
−100m
−500
−200
−100
−50m
−20m
−10m
−10
1000
1000
−5m
−2m
−1m
−50
−20
−10
500
500
200
200
100
100
−5
−2
−1
−5
−2
−1
50
50
20
20
10
10
Fig.7 Gain bandwidth product
−10m −20m −50m −100m −200m −500m
5
5
Fig.1 Ground emitter propagation
5m
5m
0
vs. collector current ( Ι )
BASE TO EMITTER VOLTAGE : V
I
C
10m 20m
10m 20m
−0.2
Ta = 150 °C
/I
B
−55 °C
COLLECTOR CURRENT : I
=80
40
20
vs. emitter current
characteristics
25 °C
EMITTER CURRENT : I
EMITTER CURRENT : I
−0.4 −0.6 −0.8 −1.0
50m 100m 200m
50m 100m 200m
500m 1
500m 1
−1 −2
E
E
V
(A)
(A)
C
Ta=25 °C
CE
2
2
V
−1.2
f=50MHz
Ta =25 °C
−5
(A)
BE
CE
= −2V
(V)
= −5V
5
5
−10 −20
−1.4
10
10
Fig.2 DC current gain vs. collector current( Ι )
10000
5000
2000
1000
500
200
100
Fig.5 Collector-emitter saturation voltage
50
20
10
−20m
−1000
10000
Fig.8 Collector output capacitance
−500
−200
−100
5000
2000
1000
−50
−20
−10
500
200
100
−5
−2
−1
50
20
10
−0.05 −0.1 −0.2
−20m −50m
−50m −100m −200m −500m
COLLECTOR TO BASE VOLTAGE : V
I
C
vs. collector current ( ΙΙ )
COLLECTOR CURRENT : I
/I
B
vs. collector-base voltage
=80
COLLECTOR CURRENT : I
−100m −200m −500m
−0.5
150 °C
V
CE
= −5V
−1
−2V
−1V
−1 −2
25 °C
−2
Ta= −55 °C
−1 −2
−5
−5
C
Ta =25 °C
(A)
−10 −20
−5
C
Ta=25 °C
−10 −20
f=1MHz
I
E
(A)
=0A
CB
−10 −20
(V)
−50
Fig.3 DC current gain vs.collector current ( ΙΙ )
10000
5000
2000
1000
500
200
100
Fig.6 Base-emitter saturation voltage
50
20
10
−500m
−200m
−100m
−20m
−50m
−20m
−10m
10000
−10
5000
2000
1000
−5
−2
−1
500
200
100
−20m −50m
50
20
10
−0.05 −0.1 −0.2
Fig.9 Emitter input capacitance
−50m −100m −200m −500m
Ta =150 °C
vs. collector current
EMITTER TO BASE VOLTAGE : V
COLLECTOR CURRENT : I
−55°C
25°C
COLLECTOR CURRENT : I
vs. emitter-base voltage
Ta=−55 °C
−100m −200m −500m
150 °C
−0.5
25 °C
Rev.A
−1
−1 −2
−2
2SA1834
−1 −2
−5
−5
C
V
CE
(A)
−5
C
= −2V
−10 −20
Ta=25 °C
−10 −20
(A)
I
f=1MHz
C
I
C
=0A
EB
/I
−10 −20
B
(V)
=80
2/3
−50