... The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary NPN type is 2SD882. Table 1. Device summary Order code 2SB772 PNP medium power transistor Figure 1. Marking Package B772 SOT-32 2SB772 SOT-32 (TO-126) Internal schematic diagram Packing Tube 1/8 8 ...
... Base peak current ( Total dissipation at T TOT T Storage temperature STG T Max. operating junction temperature J Table 3. Thermal data Symbol R Thermal resistance junction-case_max thJ-case 2/8 Parameter = < 5ms) P < 5ms 25°C c Parameter 2SB772 Value Unit - 12.5 W -65 to 150 °C 150 °C Value Unit 10 °C/W ...
... Electrical characteristics (T = 25°C; unless otherwise specified) CASE Table 4. Electrical characteristics Symbol Collector cut-off current I CES ( Collector cut-off current I CEO ( Emitter cut-off current I EBO ( Collector-emitter breakdown V (BR)CEO voltage ( Collector-base breakdown voltage V (BR)CBO ( Emitter-base breakdown voltage V (BR)EBO ( Collector-emitter saturation CE(sat) (1) voltage ...
... Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...