BUL3N7 STMicroelectronics, BUL3N7 Datasheet - Page 3

• Manufacturer Part Number: BUL3N7
• Description: TRANSISTOR FAST NPN MV TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL3N7

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 18 @ 700mA, 5V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

BUL3N7
2
Table 3.
Note: 1 Pulsed duration = 300
V
V
Symbol
V
V
Note: 1
Note: 1
Note: 1
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
I
h
CES
t
t
FE
t
t
t
s
s
r
f
f
Electrical Characteristics
Collector Cut-off Current
(V
Emitter-Base Breakdown Voltage
(I
Collector-Emitter
Sustaining Voltage (I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
Electrical Characteristics (T
C
BE
= 0)
= 0)
Parameter
B
= 0)
µ
s, duty cycle
V
V
I
I
I
I
I
I
I
I
I
I
I
I
T
I
V
L = 1 mH
E
C
C
C
C
C
C
C
C
C
C
B1
C
p
CE
CE
BE(off)
= 10 mA
= 0.7 A
= 1 A
= 0.5A
= 1A
= 2A
= 10 mA
= 0.7A
=
= 0.7 A
= 1 A
= 100 mA
CASE
= 0.14 A
= 30 µs
2A_
= 700 V
= 700
≤
1.5%.
Test Conditions
_____
_____
= -5 V
____
____
____
= 25°C; unless otherwise specified)
__ _
___
V__
__ _
__
_
I
I
I
I
I
V
V
B
B
B
B
B
V
V
I
I
B1
__T
CE
CE
B2
V
CE
CC
= 0.1A
= 0.2 A
= 0.1 A
= 0.2 A
= 0.4 A
R
clamp
= 0.2 A
= -0.14 A
bb
= 5 V
= 5 V
= 5 V
= 250 V
C
= 125°C
= 0 Ω
= 200 V
Min.
400
10
10
18
4
2 Electrical Characteristics
Typ.
100
450
120
2.4
80
Max.
0.1
0.5
0.5
0.5
1.1
1.2
1.3
18
34
Unit
mA
mA
µs
ns
ns
ns
ns
V
V
V
V
V
V
V
3/10