MJD117T4 STMicroelectronics, MJD117T4 Datasheet - Page 4

• Manufacturer Part Number: MJD117T4
• Description: TRANS PWR DARL SILICON D-PAK
• Manufacturer: STMicroelectronics

Specifications of MJD117T4

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 20W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6464-2; MJD117T4ST

2.1
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Typical characteristic (curves)
Figure 2.
Figure 4.
Figure 6.
DC current gain
(V
DC current gain
(V
Collector-emitter saturation
voltage (NPN)
CE
CE
= 3 V NPN)
= 5 V NPN)
Doc ID 3540 Rev 3
Figure 3.
Figure 5.
Figure 7.
DC current gain
(V
DC current gain
(V
Collector-emitter saturation
voltage (PNP)
CE
CE
= - 3 V PNP)
= - 5 V PNP)