MJD2955T4 STMicroelectronics, MJD2955T4 Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single MJD2955T4
Manufacturer Part Number
MJD2955T4
Description
TRANSISTOR PNP 60V 10A DPAK
Manufacturer
STMicroelectronics
Specifications of MJD2955T4
Transistor Type
PNP
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
5V @ 3.3A, 10A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 4V
Power - Max
20W
Frequency - Transition
2MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
10 A
Power Dissipation
20 W
Continuous Collector Current
10 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Frequency
2 MHz
Current, Collector
-10 A
Current, Gain
5
Frequency
2 MHz
Package Type
TO-252
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
6.25 °C/W
Voltage, Breakdown, Collector To Emitter
-60 V
Voltage, Collector To Base
-70 V
Voltage, Collector To Emitter
-60 V
Voltage, Collector To Emitter, Saturation
-8 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
MJD2955T4 -TR
APPLICATIONS
DESCRIPTION
The
complementary
manufactured using Epitaxial Base technology for
cost-effective performance.
ABSOLUTE MAXIMUM RATINGS
February 2002
For PNP type voltage and current values are negative.
Symbol
STMicroelectronics PREFERRED
SALESTYPES
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICALLY SIMILAR TO MJE2955T
AND MJE3055T
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
V
V
V
P
T
CBO
CEO
EBO
I
I
T
stg
C
B
tot
j
MJD2955
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
PNP-NPN
and
COMPLEMENTARY POWER TRANSISTORS
Parameter
pairs.
MJD3055
c
= 25
C
E
= 0)
= 0)
B
o
They
= 0)
C
form
are
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
(Suffix "T4")
-65 to 150
TO-252
MJD3055
MJD2955
DPAK
Value
150
70
60
10
20
5
6
1
MJD2955
MJD3055
3
Unit
o
o
W
V
V
V
A
A
C
C
1/6
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MJD2955T4 Summary of contents
... COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD2955 and complementary PNP-NPN manufactured using Epitaxial Base technology for cost-effective performance. ...
MJD2955 / MJD3055 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEX Current ( Collector Cut-off CBO Current ( ...
DC Current Gain (NPN type) DC Transconductance (NPN type) Collector-Emitter Saturation Voltage (NPN type) MJD2955 / MJD3055 DC Current Gain (PNP type) DC Transconductance (PNP type) Collector-Emitter Saturation Voltage (PNP type) 3/6 ...
MJD2955 / MJD3055 Base-Emitter Saturation Voltage (NPN type) Transition Frequency (NPN type) 4/6 Base-Emitter Saturation Voltage (PNP type) Transition Frequency (PNP type) ...
TO-252 (DPAK) MECHANICAL DATA DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. MAX. MIN. 2.40 0.087 ...
... This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States ...
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