2N1893 STMicroelectronics, 2N1893 Datasheet - Page 2

• Manufacturer Part Number: 2N1893
• Description: TRANSISTOR NPN 120V 0.5A TO-39
• Manufacturer: STMicroelectronics

Specifications of 2N1893

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 5V @ 15mA, 150mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 10V
• Power - Max: 800mW
• Frequency - Transition: 70MHz
• Mounting Type: Through Hole
• Package / Case: TO-39-3, TO-205AD, Metal Can
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 0.8 W
• Maximum Operating Frequency: 70 MHz
• Dc Collector/base Gain Hfe Min: 40
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2637-5

2N1893
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/5
V
V
Pulsed: Pulse duration = 300 s, duty cycle
V
V
V
Symbol
V
R
(BR)CEO
R
(BR)CER
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
C
thj-case
h
I
I
h
thj-amb
CBO
EBO
FE
CBO
EBO
f
fe
T
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Base
Breakdown Voltage
(I
Collector-Emitter
Breakdown Voltage
(R
Collector-Emitter
Breakdown Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Small Signal Current
Gain
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
C
E
B
C
BE
= 0)
= 0)
= 0)
= 0)
Parameter
10
E
= 0)
)
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
T
I
I
I
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
E
C
C
CB
CB
EB
= 100 A
= 0
= 100 A
= 10 mA
= 10 mA
= 50 mA
= 150 mA
= 50 mA
= 150 mA
= 0.1 mA
= 10 mA
= 150 mA
= 10 mA
= 1 mA
= 5 mA
= 50 mA
= 0
= -55
= 5 V
= 90 V
= 90 V
case
1 %
= 25
o
V
V
Test Conditions
C
CB
EB
V
V
= 10 V
= 0.5 V
V
o
CE
CE
C unless otherwise specified)
CE
= 5 V
= 10 V
T
V
V
= 10 V f = 20MHz
I
I
I
I
V
V
C
B
B
B
B
CE
CE
CE
CE
= 150
= 15 mA
= 15 mA
= 5 mA
= 5 mA
= 10 V
= 10 V
= 10 V
= 10 V
f = 1MHz
f = 1MHz
f = 1KHz
o
f = 1KHz
Max
Max
C
Min.
120
100
50
80
20
35
40
20
30
45
7
187.5
Typ.
0.82
0.96
50
80
80
40
70
85
70
13
55
50
Max.
120
150
1.2
0.9
1.3
10
15
10
15
85
5
o
o
Unit
MHz
C/W
C/W
nA
nA
pF
pF
V
V
V
V
V
V
V
V
A