2SA1015-O(F,T) Toshiba, 2SA1015-O(F,T) Datasheet
2SA1015-O(F,T)
Manufacturer Part Number
2SA1015-O(F,T)
Description
TRANS PNP 50V 150MA TO-92
Manufacturer
Toshiba
Datasheet
1.2SA1015-OTE2FT.pdf
(3 pages)
Specifications of 2SA1015-O(F,T)
Transistor Type
PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 2mA, 6V
Power - Max
400mW
Frequency - Transition
80MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
High voltage and high current: V
Excellent h
Low noise: NF = 1dB (typ.) (f = 1 kHz)
Complementary to 2SC1815.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Note: h
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE (1)
Characteristics
Characteristics
FE
classification O: 70~140, Y: 120~240, GR: 200~400
linearity : h
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
: h
FE (2)
FE
(I
C
I
(Ta = 25°C)
= 80 (typ.) at V
C
= −0.1 mA)/h
CEO
= −150 mA (max)
(Ta = 25°C)
V
V
Symbol
Symbol
h
h
V
V
V
CE (sat)
BE (sat)
I
= −50 V (min),
I
FE (1)
FE (2)
T
CBO
EBO
C
r
P
NF
CBO
CEO
EBO
I
I
T
f
bb’
stg
C
B
T
ob
C
2SA1015
j
(Note)
FE
CE
V
V
V
V
I
I
V
V
V
V
f = 1 kHz
C
C
CB
EB
CE
CE
CE
CB
CE
CE
(I
= −100 mA, I
= −100 mA, I
−55~125
= −6 V, I
C
Rating
= −50 V, I
= −5 V, I
= −6 V, I
= −6 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −6 V, I
−150
= −2 mA) = 0.95 (typ.)
−50
−50
−50
400
125
−5
1
Test Condition
C
C
C
C
C
E
C
E
E
= 0
= −2 mA
= −150 mA
B
B
= −0.1 mA, R
= −150 mA
= 0
= 0, f = 1 MHz
= 1 mA, f = 30 MHz
= −1 mA
= −10 mA
= −10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
G
= 10 kΩ,
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
70
25
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
1.0
80
30
⎯
⎯
⎯
⎯
⎯
4
2-5F1B
TO-92
SC-43
2007-11-01
2SA1015
−0.1
−0.1
−0.3
−1.1
Max
400
10
⎯
⎯
⎯
7
Unit: mm
MHz
Unit
μA
μA
pF
dB
Ω
V
V
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2SA1015-O(F,T) Summary of contents
Page 1
... TOSHIBA 2-5F1B °C Weight: 0.21 g (typ.) Min Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ −0.1 ⎯ ⎯ ⎯ 80 ⎯ 4 ⎯ kΩ, G ⎯ 1.0 2007-11-01 2SA1015 Unit: mm Max Unit −0.1 μA −0.1 μA 400 ⎯ −0.3 V −1.1 V ⎯ MHz 7 pF ⎯ Ω ...
Page 2
... 2 2SA1015 2007-11-01 ...
Page 3
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SA1015 2007-11-01 ...