BUH150G ON Semiconductor, BUH150G Datasheet - Page 5

• Manufacturer Part Number: BUH150G
• Description: TRANS NPN SW 700V 15A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUH150G

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 700V
• Vce Saturation (max) @ Ib, Ic: 5V @ 4A, 20A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 10A, 5V
• Power - Max: 150W
• Frequency - Transition: 23MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
1.5
0.5
10
1
0
0.001
1
Figure 7. Base−Emitter Saturation Region
I
C
/I
B
= 10
0.01
T
T
T
J
J
I
J
C
V
= - 20°C
= 125°C
, COLLECTOR CURRENT (AMPS)
= 25°C
R
Figure 9. Capacitance
, REVERSE VOLTAGE (VOLTS)
0.1
C
ib
(pF)
10
1
TYPICAL STATIC CHARACTERISTICS
C
ob
(pF)
T
f
(test)
J
= 25°C
10
= 1 MHz
http://onsemi.com
100
100
5
900
800
700
600
500
400
1.5
0.5
2
1
0
0.01
10
Figure 8. Collector Saturation Region
BVCER(sus) @ 200 mA
Figure 10. Resistive Breakdown
(I
V
C
CE(sat)
0.1
= 1 A)
I
B
, BASE CURRENT (A)
BVCER @ 10 mA
R
BE
5 A
100
1
(W)
8 A
10 A
15 A
10
20 A
T
T
J
J
= 25°C
= 25°C
1000
100