BUH150G ON Semiconductor, BUH150G Datasheet - Page 9

• Manufacturer Part Number: BUH150G
• Description: TRANS NPN SW 700V 15A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUH150G

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 700V
• Vce Saturation (max) @ Ib, Ic: 5V @ 4A, 20A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 10A, 5V
• Power - Max: 150W
• Frequency - Transition: 23MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.8
0.6
0.4
0.2
0.01
100
0.1
1
0
10
1
20
0.01
0.1
1
1
Figure 22. Forward Bias Safe Operating Area
0.01
Figure 21. Forward Bias Power Derating
THERMAL DERATING
0.05
0.02
0.5
0.2
0.1
40
TYPICAL THERMAL RESPONSE
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
60
SINGLE PULSE
C
, CASE TEMPERATURE (°C)
10
80
0.1
DC
SECOND BREAKDOWN
100
Figure 24. Typical Thermal Response (Z
5 ms
DERATING
100
120
1 ms
10 ms
140
http://onsemi.com
1
160
1 ms
1000
t, TIME (ms)
9
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 22 is
based on T
level. Second breakdown pulse limits are valid for duty cycles
to 10% but must be derated when T
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 22 may be found at any case temperature by using the
appropriate curve on Figure 21.
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. For inductive loads, high voltage and
current must be sustained simultaneously during turn−off
with the base to emitter junction reverse biased. The safe level
is specified as a reverse biased safe operating area
(Figure 23). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
16
14
12
10
There are two limitations on the power handling ability of
T
8
6
4
2
0
P
300
J(pk)
(pk)
Figure 23. Reverse Bias Safe Operating Area
DUTY CYCLE, D = t
may be calculated from the data in Figure 24. At any
t
1
10
C
V
qJC
t
CE
2
= 25°C; T
400
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
(t)) for BUH150
0 V
1
/t
2
J(pk)
500
GAIN ≥ 5
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
is variable depending on power
J(pk)
qJC
qJC
(t) = r(t) R
= 0.83°C/W MAX
- 5 V
- T
100
600
C
= P
-1.5 V
qJC
(pk)
1
C
R
qJC
> 25°C. Second
T
L
(t)
700
C
C
= 4 mH
≤ 125°C
C
−V
1000
800
CE