BUH150G ON Semiconductor, BUH150G Datasheet - Page 6

• Manufacturer Part Number: BUH150G
• Description: TRANS NPN SW 700V 15A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUH150G

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 700V
• Vce Saturation (max) @ Ib, Ic: 5V @ 4A, 20A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 10A, 5V
• Power - Max: 150W
• Frequency - Transition: 23MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2000
1800
1600
1400
1200
1000
800
600
400
200
550
450
350
250
150
50
0
8
7
6
5
4
3
2
1
0
0
1
1
I
V
V
L
B1
C
CC
Z
I
V
PW = 40 ms
B1
CC
= 300 V
= 200 mH
= I
= 15 V
= I
Figure 13. Inductive Storage Time, t
B2
= 300 V
3
3
Figure 11. Resistive Switching, t
Figure 14. Inductive Storage Time,
B2
3
T
T
J
J
I
I
I
C
= 125°C
= 25°C
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
5
5
t
c
125°C
& t
6
I
C
7
7
fi
/I
B
@ I
T
T
= 5
J
J
= 125°C
= 25°C
C
/I
9
9
25°C
B
TYPICAL SWITCHING CHARACTERISTICS
9
= 5
11
11
I
V
V
L
I
t
B1
C
c
12
C
CC
Z
/I
I
C
= 300 V
= 200 mH
B
= I
on
t
/I
= 15 V
fi
25°C
125°C
13
= 10
13
B
B2
si
http://onsemi.com
= 5
15
15
15
6
800
700
600
500
400
300
200
100
12
10
8
6
4
2
0
8
7
6
5
4
3
2
1
0
0
0
0
1
I
V
V
L
Figure 13 Bis. Inductive Storage Time, t
B1
I
C
CC
Z
C
/I
= 200 mH
= 300 V
= I
Figure 12. Resistive Switch Time, t
B
= 15 V
Figure 15. Inductive Storage Time,
= 10
B2
2
T
T
I
J
J
I
I
C
C
C
= 125°C
= 25°C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
t
5
4
c
T
T
& t
J
J
4
I
= 25°C
= 125°C
C
fi
/I
B
I
C
@ I
= 5
/I
B
T
T
= 10
C
C
C
= 25°C
= 125°C
/I
B
6
= 10
10
7
I
V
V
L
I
V
PW = 20 ms
B1
B1
C
CC
Z
CC
= 300 V
= 200 mH
= I
= I
8
t
= 15 V
= 300 V
c
B2
B2
off
t
fi
si
15
10
10