BUH150G ON Semiconductor, BUH150G Datasheet - Page 8

• Manufacturer Part Number: BUH150G
• Description: TRANS NPN SW 700V 15A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BUH150G

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 700V
• Vce Saturation (max) @ Ib, Ic: 5V @ 4A, 20A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 10A, 5V
• Power - Max: 150W
• Frequency - Transition: 23MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

COMMON
+15 V
+10 V
-V
off
1 mF
0 V
I
B
MPF930
50
W
Figure 19. Dynamic Saturation Voltage
V
CE
1 ms
90% I
150 W
3 W
B
500 mF
MPF930
dyn 1 ms
3 ms
Measurements
100 W
3 W
TIME
dyn 3 ms
150 W
3 W
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
MTP8P10
MJE210
MUR105
MTP12N10
MTP8P10
http://onsemi.com
R
R
B2
8
B1
A
1 mF
I
out
10
100 mF
9
8
7
6
5
4
3
2
1
0
0
Figure 20. Inductive Switching Measurements
V
L = 10 mH
R
V
I
C(pk)
(BR)CEO(sus)
B2
CC
V
clamp
= ∞
I
= 20 Volts
I
1
C
B
V
= 100 mA
CE
I
B
90% I
2
10% V
I
B
1
B1
clamp
3
V
Inductive Switching
L = 200 mH
R
V
R
desired I
CE
t
CC
si
B2
B1
I
B
TIME
PEAK
2
= 0
selected for
= 15 Volts
4
B1
5
t
c
90% I
I
C
t
6
fi
PEAK
C
RBSOA
L = 500 mH
R
V
R
desired I
CC
10% I
B2
B1
7
= 0
selected for
= 15 Volts
C
B1
8