NJW1302G ON Semiconductor, NJW1302G Datasheet - Page 5

• Manufacturer Part Number: NJW1302G
• Description: TRANS PNP BIPOLAR 15A 250V TO-3P
• Manufacturer: ON Semiconductor

Specifications of NJW1302G

• Transistor Type: PNP
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 800mA, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 3A, 5V
• Power - Max: 200W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, TO-247-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

12000
10000
1200
1000
8000
6000
4000
2000
800
600
400
200
0
0
0
10
1
V
CB
V
Figure 13. Output Capacitance
Figure 15. Input Capacitance
EB
20
2
, COLLECTER-BASE VOLTAGE (V)
, EMITTER-BASE VOLTAGE (V)
30
3
PNP NJW1302G
40
4
50
5
NJW3281G (NPN) NJW1302G (PNP)
60
6
70
7
TYPICAL CHARACTERISTICS
f
f
Test
Test
T
T
J
J
80
= 25°C
= 1 MHz
8
= 25°C
= 1 MHz
http://onsemi.com
90
9
100
10
5
10000
1200
1000
8000
6000
4000
2000
800
600
400
200
0
0
0
V
V
CB
Figure 14. Output Capacitance
2
20
Figure 16. Input Capacitance
EB
, COLLECTER-BASE VOLTAGE (V)
, EMITTER-BASE VOLTAGE (V)
NPN NJW3281G
4
40
6
60
f
Test
f
Test
T
T
J
J
8
80
= 25°C
= 1 MHz
= 25°C
= 1 MHz
100
10