NJW1302G ON Semiconductor, NJW1302G Datasheet - Page 6

• Manufacturer Part Number: NJW1302G
• Description: TRANS PNP BIPOLAR 15A 250V TO-3P
• Manufacturer: ON Semiconductor

Specifications of NJW1302G

• Transistor Type: PNP
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 800mA, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 3A, 5V
• Power - Max: 200W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, TO-247-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
There are two limitations on the power handling ability of
100
1.0
0.1
10
1.0
Figure 17. Active Region Safe Operating Area
V
CE
, COLLECTOR EMITTER (VOLTS)
10
PNP NJW1302G
1 Sec
10 mSec
NJW3281G (NPN) NJW1302G (PNP)
100
100 mSec
C
http://onsemi.com
- V
1000
CE
6
T
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
The data of Figures 17 and 18 is based on T
100
1.0
0.1
10
is variable depending on conditions. At high case
1.0
Figure 18. Active Region Safe Operating Area
V
CE
, COLLECTOR EMITTER (VOLTS)
10
NPN NJW3281G
1 Sec
10 mSec
100
100 mSec
J(pk)
= 150°C;
1000