MT46V32M16FN-6 IT:F Micron Technology Inc, MT46V32M16FN-6 IT:F Datasheet - Page 48

• Manufacturer Part Number: MT46V32M16FN-6 IT:F
• Description: DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 60-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16FN-6 IT:F

• Package: 60FBGA
• Density: 512 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.5 V
• Maximum Clock Rate: 333 MHz
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Package / Case: 60-FBGA
• Organization: 32Mx16
• Address Bus: 15b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.5V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 195mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ACTIVE (ACT)
Figure 17:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Activating a Specific Row in a Specific Bank
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access, like a read or a write, as shown in Figure 17. The value on the BA0,
BA1 inputs selects the bank, and the address provided on inputs A0–An selects the row.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
HIGH
Bank
Row
Don’t Care
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands