MT46V64M16P-6T:A Micron Technology Inc, MT46V64M16P-6T:A Datasheet - Page 4

DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray

MT46V64M16P-6T:A

Manufacturer Part Number
MT46V64M16P-6T:A
Description
DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V64M16P-6T:A

Density
1 Gb
Maximum Clock Rate
333 MHz
Package
66TSOP
Operating Supply Voltage
2.5 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (64M x 16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Package / Case
66-TSOP
Organization
64Mx16
Address Bus
16b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
275mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46V64M16P-6T:A
Manufacturer:
MICRON
Quantity:
5 530
Part Number:
MT46V64M16P-6T:A
Manufacturer:
MICRON
Quantity:
48
Part Number:
MT46V64M16P-6T:A
Manufacturer:
MICRON/美光
Quantity:
20 000
State Diagram
Figure 2:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core1.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Simplified State Diagram
Note:
applied
Power
This diagram represents operations within a single bank only and does not capture concur-
rent operations in other banks.
ACT = ACTIVE
BST = BURST TERMINATE
CKEH = Exit power-down
CKEL = Enter power-down
EMR = Extended mode register
LMR = LOAD MODE REGISTER
MR = Mode register
WRITE
Precharge
all banks
Power
PRE
LMR
EMR
PRE
WRITE A
MR
on
Write A
power-
Active
down
Write
CKE LOW
WRITE
LMR
4
CKE HIGH
WRITE A
PRE
precharged
Precharge
Micron Technology, Inc., reserves the right to change products or specifications without notice.
all banks
PREALL
active
ACT
Row
PRE
Idle
READ A
PRE = PRECHARGE
PREALL = PRECHARGE all banks
READ A = READ with auto precharge
REFA = AUTO REFRESH
REFS = Enter self refresh
REFSX = Exit self refresh
WRITE A = WRITE with auto precharge
CKEH
READ
REFS
READ A
PRE
REFSX
CKEL
1Gb: x4, x8, x16 DDR SDRAM
READ
Precharge
REFA
refresh
power-
down
Self
BST
Read A
Burst
Read
stop
Automatic sequence
Command sequence
©2003 Micron Technology, Inc. All rights reserved.
READ A
refresh
Auto
State Diagram
READ

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