MPSA06,412 NXP Semiconductors, MPSA06,412 Datasheet - Page 3

• Manufacturer Part Number: MPSA06,412
• Description: TRANSISTOR NPN GP 80V TO-92
• Manufacturer: NXP Semiconductors

Specifications of MPSA06,412

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-1173; 933498980412

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Oct 11
R
I
I
h
V
V
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BE
th(j-a)
NPN general purpose transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
PARAMETER
PARAMETER
V
V
V
V
I
V
V
C
CB
EB
CE
CE
CE
CE
= 100 mA; I
= 5 V; I
= 80 V; I
= 1 V; I
= 1 V; I
= 1 V; I
= 2 V; I
note 1
3
CONDITIONS
C
C
C
C
C
E
= 0 A
= 10 mA
= 100 mA
= 100 mA
= 10 mA; f = 100 MHz
B
= 0 A
CONDITIONS
= 10 mA
100
100
100
MIN.
VALUE
200
Product specification
50
50
250
1.2
MAX.
MPSA06
UNIT
K/W
nA
nA
mV
V
MHz
UNIT