2PB710AR,115 NXP Semiconductors, 2PB710AR,115 Datasheet - Page 2

TRANSISTOR PNP 50V 500MA SC59

2PB710AR,115

Manufacturer Part Number
2PB710AR,115
Description
TRANSISTOR PNP 50V 500MA SC59
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2PB710AR,115

Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
600mV @ 30mA, 300mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 150mA, 10V
Power - Max
250mW
Frequency - Transition
120MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2PB710AR T/R
2PB710AR T/R
934026670115
NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PD602A.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 31
2PB710AQ
2PB710AR
2PB710AS
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
DQ
DR
DS
open emitter
open base
open collector
T
amb
2
≤ 25 °C; note 1
PINNING
handbook, halfpage
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SC-59) and symbol.
Top view
base
emitter
collector
1
3
−65
−65
2
MIN.
DESCRIPTION
−60
−50
−5
−500
−1
−200
250
+150
150
+150
1
Product data sheet
MAX.
MAM322
2PB710A
3
2
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT

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