BC635,116 NXP Semiconductors, BC635,116 Datasheet - Page 10
![TRANSISTOR NPN 45V 1A TO-92](/photos/5/62/56201/568-to-92_t_r_amo_sml.jpg)
BC635,116
Manufacturer Part Number
BC635,116
Description
TRANSISTOR NPN 45V 1A TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.BCP54-16115.pdf
(15 pages)
Specifications of BC635,116
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
830mW
Frequency - Transition
180MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933221920116
BC635 T/R
BC635 T/R
BC635 T/R
BC635 T/R
NXP Semiconductors
BC635_BCP54_BCX54_7
Product data sheet
Fig 10. DC current gain as a function of collector
Fig 12. Base-emitter voltage as a function of collector
(1) T
(2) T
(3) T
V
(1) T
(2) T
(3) T
h
(V)
FE
BE
300
200
100
1.2
0.8
0.4
0
0
10
10
V
current; typical values
V
current; typical values
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
10
10
006aaa080
006aaa081
3
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 07 — 4 June 2007
4
4
Fig 11. Collector current as a function of
Fig 13. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(A)
(V)
I
10
10
C
1.6
1.2
0.8
0.4
BC635; BCP54; BCX54
0
1
1
2
10
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
1
B
45 V, 1 A NPN medium power transistors
= 10
= 25 C
= 150 C
= 25 C
= 55 C
I
B
0.4
(mA) = 50
1
0.8
10
45
(1)
(2)
40
10
1.2
(3)
2
35
30
© NXP B.V. 2007. All rights reserved.
10
1.6
006aaa082
006aaa084
3
V
I
C
CE
(mA)
(V)
25
20
15
10
5
10
2.0
4
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