BU508A STMicroelectronics, BU508A Datasheet

TRANSISTOR NPN 700V 8A TO-247

BU508A

Manufacturer Part Number
BU508A
Description
TRANSISTOR NPN 700V 8A TO-247
Manufacturer
STMicroelectronics
Datasheet

Specifications of BU508A

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
700V
Vce Saturation (max) @ Ib, Ic
1V @ 2A, 4.5A
Current - Collector Cutoff (max)
1mA
Power - Max
125W
Frequency - Transition
7MHz
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Other names
497-2599-5
APPLICATIONS:
DESCRIPTION
The BU208A, BU508A and BU508AFI are
manufactured
technology for cost-effective high performance
and use a Hollow Emitter structure to enhance
switching speeds.
ABSOLUTE MAXIMUM RATINGS
April 2002
Symbol
STMicroelectronics PREFERRED
SALESTYPES
HIGH VOLTAGE CAPABILITY (> 1500 V)
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
HORIZONTAL DEFLECTION FOR COLOUR
TV
V
V
V
V
T
P
I
CEO
CES
EBO
I
CM
T
isol
stg
C
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Total Dissipation at T
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
®
using
Multiepitaxial
Parameter
c
= 25
C
p
= 0)
< 5 ms)
B
o
BE
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
Mesa
NPN POWER TRANSISTORS
TO-218
-65 to 175 -65 to 150
BU208A
INTERNAL SCHEMATIC DIAGRAM
TO - 3
150
175
BU508A/BU508AFI
TO - 218 ISOWATT218
BU508A
1
1
125
150
Value
2
1500
700
10
15
2
8
3
ISOWATT218
BU508AFI
-65 to 150
2500
150
BU208A
50
For TO-3 :
C = Tab
E = Pin2.
TO-3
1
Unit
o
o
2
W
V
V
V
A
A
V
C
C
3
1/8

Related parts for BU508A

BU508A Summary of contents

Page 1

... HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS ...

Page 2

... BU208A / BU508A / BU508AFI THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage INDUCTIVE LOAD t Storage Time ...

Page 3

... Derating Curves (TO-3) DC Current Gain Base Emitter Saturation Voltage BU208A / BU508A / BU508AFI Derating Curves (TO-218/ISOWATT218) Collector Emitter Saturation Voltage Switching Time Inductive Load 3/8 ...

Page 4

... BU208A / BU508A / BU508AFI Switching Time Inductive Load Figure 1: Inductive Load Switching Test Circuit. 4/8 ...

Page 5

... BU208A / BU508A / BU508AFI inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 P003F 5/8 ...

Page 6

... BU208A / BU508A / BU508AFI TO-218 (SOT-93) MECHANICAL DATA DIM. MIN. A 4 0.5 F 1.1 G 10.8 H 14.7 L2 – 3. – Ø 6/8 mm TYP. MAX. 4.9 1.37 2.5 0.78 1.3 11.1 15.2 16.2 18 4.15 31 12.2 4 ¯ R inch MIN. TYP. MAX. 0.185 0.193 0.046 0.054 0.098 ...

Page 7

... BU208A / BU508A / BU508AFI inch TYP. MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 0.835 0.783 0.929 1.673 0.207 ...

Page 8

... BU208A / BU508A / BU508AFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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