SO642 STMicroelectronics, SO642 Datasheet
SO642
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SO642 Summary of contents
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... Collector Peak Current CM P Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j June 2002 SMALL SIGNAL NPN TRANSISTOR Marking N91 INTERNAL SCHEMATIC DIAGRAM = SO642 PRELIMINARY DATA SOT-23 Value Unit 300 V 300 0.1 A 0.3 A 310 mW o -65 to 150 C o 150 C 1/4 ...
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... SO642 THERMAL DATA R Thermal Resistance Junction-Ambient thj-amb Device mounted on a PCB area ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector-Emitter (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...
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... MIN. 1.1 33.4 0.95 25.6 1.4 47.2 3 110.2 1.05 37.4 2.05 74.8 2.5 82.6 0.48 14.9 0.6 11.8 0.1 0.65 11.8 0.17 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 0 3.9 25.6 3.5 6.7 0044616/B SO642 3/4 ...
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... SO642 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...