BU806 STMicroelectronics, BU806 Datasheet
BU806
Manufacturer Part Number
BU806
Description
TRANSISTOR DARL NPN TO-220
Manufacturer
STMicroelectronics
Type
Medium Voltage, Power, Switchr
Specifications of BU806
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
1.5V @ 50mA, 5A
Current - Collector Cutoff (max)
100µA
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
200V
Collector-base Voltage(max)
400V
Emitter-base Voltage (max)
6V
Base-emitter Saturation Voltage (max)
2.4@50mA@5AV
Collector-emitter Saturation Voltage
1.5@50mA@5AV
Collector Current (dc) (max)
8A
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Current, Input
2 A
Current, Output
8 A
Power Dissipation
60 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
70
Time, Turn-off Delay
0.4 μs
Time, Turn-on Delay
0.35 μs
Voltage, Collector To Emitter, Saturation
1.5 V
Voltage, Input
6 V
Voltage, Output
200 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Lead Free Status / Rohs Status
Compliant
Other names
497-7197-5
BU806ST
BU806ST
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU806
Manufacturer:
ST
Quantity:
20 000
APPLICATION
DESCRIPTION
The devices are silicon Epitaxial Planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110
ABSOLUTE MAXIMUM RATINGS
Symbol
STMicroelectronics PREFERRED
SALESTYPES
NPN DARLINGTONS
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
V
V
V
V
T
P
I
I
CBO
CEO
o
CEV
EBO
I
CM
DM
T
I
stg
C
B
tot
CRT video displays.
j
Collector-base Voltage (I
Collector-emitter Voltage (V
Collector-emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Damper Diode Peak Forward Current
Base Current
Total Power Dissipation at T
Storage Temperature
Max Operating Junction Temperature
®
MEDIUM VOLTAGE NPN FAST SWITCHING
Parameter
C
E
= 0)
= 0)
B
BE
case
= 0)
= -6V)
25
o
C
DARLINGTON TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
BU806
400
400
200
-65 to 150
Value
150
15
10
60
TO-220
6
8
2
BU807
1
330
330
150
2
3
BU806
BU807
Unit
o
o
W
V
V
V
V
A
A
A
A
C
C
1/4
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BU806 Summary of contents
Page 1
... Damper Diode Peak Forward Current DM I Base Current B P Total Power Dissipation at T tot T Storage Temperature stg T Max Operating Junction Temperature j DARLINGTON TRANSISTORS INTERNAL SCHEMATIC DIAGRAM = -6V case BU806 BU807 TO-220 Value BU806 BU807 400 330 400 330 200 150 -65 to 150 150 Unit 1/4 ...
Page 2
... BU806 / BU807 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEV Current (V = -6V Emitter Cut-off EBO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage ...
Page 3
... BU806 / BU807 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 ...