BU808DFI STMicroelectronics, BU808DFI Datasheet - Page 2

• Manufacturer Part Number: BU808DFI
• Description: IC TRANSISTR DARL NPN ISOWATT218
• Manufacturer: STMicroelectronics

Specifications of BU808DFI

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 700V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 500mA, 5A
• Current - Collector Cutoff (max): 400µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5A, 5V
• Power - Max: 52W
• Mounting Type: Through Hole
• Package / Case: ISOWATT-218-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

BU808DFI
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/7
Safe Operating Area
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
V
R
CE(sat)
BE(sat)
h
thj-case
I
I
CES
EBO
V
FE
t
t
t
t
s
s
f
f
F
Thermal Resistance Junction-case
Collector Cut-off
Current (V
Emitter Cut-off Current
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
Diode Forward Voltage I
C
= 0)
Parameter
BE
= 0)
V
V
I
I
I
V
I
V
I
T
I
C
C
C
C
B1
B1
F
j
CE
EB
CC
CC
= 5 A
= 5 A
= 5 A
= 5 A
= 5 A
= 100
= 0.5 A
= 0.5 A
= 5 V
= 1400 V
= 150 V
= 150 V
case
o
= 25
C
Test Conditions
V
V
CE
CE
o
C unless otherwise specified)
= 5 V
= 5 V T
I
I
V
V
I
I
B
B
C
C
BE(off)
BE(off)
Thermal Impedance
= 0.5 A
= 0.5 A
= 5 A
= 5 A
= -5 V
= -5 V
j
= 100
Max
o
C
Min.
60
20
Typ.
0.8
2.4
2
Max.
400
100
230
1.6
2.1
0.8
3
3
o
Unit
mA
C/W
V
V
V
A
s
s
s
s