BUL213 STMicroelectronics, BUL213 Datasheet - Page 2

• Manufacturer Part Number: BUL213
• Description: TRANSISTOR POWER NPN TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL213

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce Saturation (max) @ Ib, Ic: 900mV @ 200mA, 1A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 16 @ 350mA, 3V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

BUL213
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/6
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
V
R
R
CEO(sus)
CE(sat)
BE(sat)
V
h
thj-case
I
thj-amb
I
CEO
CES
EBO
FE
t
t
t
t
s
s
f
f
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Collector-Emitter
Sustaining Voltage
(I
Emitter-Base Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
B
C
= 0)
= 0)
Parameter
B
BE
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
L = 200 H
I
I
L = 200 H
I
C
E
C
C
C
C
C
C
C
B1
C
B1
CE
CE
CE
= 100 mA
= 10 mA
= 0.5 A
= 1 A
= 0.5 A
= 1 A
= 0.35 A
= 10 mA
= 1 A
= 1 A
= 0.2 A
= 0.2 A
= 1300 V
= 1300 V
= 600 V
case
= 25
Test Conditions
o
C unless otherwise specified)
V
I
T
V
I
I
V
I
I
V
I
B2
T
L = 25 mH
B
B
B
B
c
B2
CL
CE
CE
CL
c
= 125
= 0.1 A
= 0.1 A
= 0.2 A
= 0.2 A
= -0.4 A
= 125
= -0.4 A
= 400 V
= 5 V
= 3 V
= 400 V
o
Max
o
C
Max
C
Min.
600
16
12
9
Typ.
2.08
62.5
250
380
5.2
4
Max.
100
500
250
420
0.5
0.9
1.2
1.5
36
6
o
o
Unit
C/W
C/W
ns
ns
V
V
V
V
V
V
A
A
A
s
s