SGSD100 STMicroelectronics, SGSD100 Datasheet - Page 4

• Manufacturer Part Number: SGSD100
• Description: TRANSISTOR DARL NPN COMPL TO-247
• Manufacturer: STMicroelectronics

Specifications of SGSD100

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 25A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 3.5V @ 80mA, 20A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 10A, 3V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-6727-5; SGSD100

Electrical characteristics
1. Pulsed : Pulse duration = 300 µs, duty cycle
Note:
4/10
Symbol
E
I
s/b
s/b
For PNP type voltage and current values are negative
Second breakdown energy
Second breakdown current
Parameter
≤
V
V
V
1.5%
CC
CC
CE
= 25 V t = 500 ms
= 30 V L = 3 mH
= 30 V L = 3 mH T
Test conditions
C
= 100
o
C
Min.
250
250
6
SGSD100 SGSD200
Typ.
Max.
Unit
mJ
mJ
A