PDTA114YU,115 NXP Semiconductors, PDTA114YU,115 Datasheet - Page 5

TRANS PNP 50V 100MA SOT-323

PDTA114YU,115

Manufacturer Part Number
PDTA114YU,115
Description
TRANS PNP 50V 100MA SOT-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA114YU,115

Package / Case
SC-70, SOT-323
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.213
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V
Peak Dc Collector Current
- 100 mA
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
- 10 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057545115
PDTA114YU T/R
PDTA114YU T/R
NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 02
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= −5 mA; I
= −100 μA; V
= −1 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0; V
5
CONDITIONS
CB
C
B
C
CE
E
B
B
= −0.25 mA
= 0
= −5 mA
= −10 V; f = 1 MHz −
CE
= 0
= 0
= 0; T
= −0.3 V
= −5 V
j
= 150 °C
100
−1.4
7
3.7
MIN.
PDTA114Y series
−0.7
−0.8
10
4.7
TYP.
Product data sheet
−100
−1
−50
−150
−100
−0.5
13
5.7
3
MAX.
nA
μA
μA
μA
mV
V
V
pF
UNIT

Related parts for PDTA114YU,115