PDTA143TT,215 NXP Semiconductors, PDTA143TT,215 Datasheet - Page 5

• Manufacturer Part Number: PDTA143TT,215
• Description: TRANS PNP 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTA143TT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 4.7 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057525215; PDTA143TT T/R; PDTA143TT T/R

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 04
I
I
I
h
V
R1
C
SYMBOL
amb
CBO
CEO
EBO
FE
CEsat
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input resistor
collector capacitance
PARAMETER
V
V
V
V
V
I
C
E
CB
CE
CE
EB
CE
= i
= −5 mA; I
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0; V
5
CONDITIONS
CB
C
B
C
E
B
B
= −0.25 mA
= 0
= −1 mA
= −10 V; f = 1 MHz −
= 0
= 0
= 0; T
j
= 150 °C
−
−
−
−
200
−
3.3
MIN.
PDTA143T series
−
−
−
−
−
−
4.7
−
TYP.
Product data sheet
−100
−1
−50
−100
−
−150
6.1
3
MAX.
nA
μA
μA
nA
mV
kΩ
pF
UNIT