PDTA123YT,215 NXP Semiconductors, PDTA123YT,215 Datasheet - Page 16

• Manufacturer Part Number: PDTA123YT,215
• Description: TRANS PNP W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTA123YT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.222
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058187215; PDTA123YT T/R; PDTA123YT T/R

NXP Semiconductors
10. Revision history
Table 10.
PDTA123Y_SER_4
Product data sheet
Document ID
PDTA123Y_SER_4
Modifications:
PDTA123Y_SER_3
PDTA123YT_2
PDTA123YT_1
Revision history
Release date
20090903
20050405
20040611
20040325
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•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content
Figure 5 “Package outline SOT416
Figure 6 “Package outline SOT346
Figure 11 “Package outline SOT23
Figure 12 “Package outline SOT323
Rev. 04 — 3 September 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Objective data sheet
PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k
(SC-75)”: updated
(SC-59A/TO-236)”: updated
(TO-236AB)”: updated
(SC-70)”: updated
Change notice
-
-
-
-
PDTA123Y series
Supersedes
PDTA123Y_SER_3
PDTA123YT_2
PDTA123YT_1
-
© NXP B.V. 2009. All rights reserved.
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