PDTA123YU,115 NXP Semiconductors, PDTA123YU,115 Datasheet - Page 16
PDTA123YU,115
Manufacturer Part Number
PDTA123YU,115
Description
TRANS PNP W/RES 50V SOT-323
Manufacturer
NXP Semiconductors
Datasheet
1.PDTA123YE115.pdf
(18 pages)
Specifications of PDTA123YU,115
Package / Case
SC-70, SOT-323
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhm
Typical Resistor Ratio
0.222
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058792115
PDTA123YU T/R
PDTA123YU T/R
PDTA123YU T/R
PDTA123YU T/R
NXP Semiconductors
10. Revision history
Table 10.
PDTA123Y_SER_4
Product data sheet
Document ID
PDTA123Y_SER_4
Modifications:
PDTA123Y_SER_3
PDTA123YT_2
PDTA123YT_1
Revision history
Release date
20090903
20050405
20040611
20040325
•
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content
Figure 5 “Package outline SOT416
Figure 6 “Package outline SOT346
Figure 11 “Package outline SOT23
Figure 12 “Package outline SOT323
Rev. 04 — 3 September 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Objective data sheet
PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k
(SC-75)”: updated
(SC-59A/TO-236)”: updated
(TO-236AB)”: updated
(SC-70)”: updated
Change notice
-
-
-
-
PDTA123Y series
Supersedes
PDTA123Y_SER_3
PDTA123YT_2
PDTA123YT_1
-
© NXP B.V. 2009. All rights reserved.
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