PDTA143ET,215 NXP Semiconductors, PDTA143ET,215 Datasheet - Page 5

• Manufacturer Part Number: PDTA143ET,215
• Description: TRANS PNP W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTA143ET,215

• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 4.7 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 30
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031050215::PDTA143ET T/R::PDTA143ET T/R

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 04
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= −10 mA; I
= −100 μA; V
= −20 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0; V
5
CONDITIONS
CB
C
C
B
E
B
B
= 0
= −10 mA
CE
= −10 V; f = 1 MHz −
CE
= −0.5 mA
= 0
= 0
= 0; T
= −0.3 V
= −5 V
j
= 150 °C
−
−
−
−
30
−
−
−2.5
3.3
0.8
MIN.
PDTA143E series
−
−
−
−
−
−
−1.1
−1.9
4.7
1
−
TYP.
Product data sheet
−100
−1
−50
−0.9
−
−150
−0.5
−
6.1
1.2
3
MAX.
nA
μA
μA
mA
mV
V
V
kΩ
pF
UNIT